IXBK64N250
| Parameters | |
|---|---|
| Factory Lead Time | 28 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-264-3, TO-264AA |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Packaging | Bulk |
| Published | 2011 |
| Series | BIMOSFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 735W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) | 2500V |
| Current - Collector (Ic) (Max) | 75A |
| Power Dissipation-Max (Abs) | 735W |
| Turn On Time | 632 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 64A |
| Turn Off Time-Nom (toff) | 397 ns |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet