IXBH40N160
| Parameters | |
|---|---|
| Current Rating | 33A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 60ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.6kV |
| Max Collector Current | 33A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.6kV |
| Voltage - Collector Emitter Breakdown (Max) | 1600V |
| Turn On Time | 260 ns |
| Test Condition | 960V, 20A, 22 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 7.1V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 310 ns |
| Gate Charge | 130nC |
| Current - Collector Pulsed (Icm) | 40A |
| Gate-Emitter Voltage-Max | 20V |
| VCEsat-Max | 6 V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 700ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 26 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| Series | BIMOSFET™ |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| Number of Terminations | 3 |
| Additional Feature | BIPOLAR MOS TRANSISTOR WITH COLLECTOR-EMITTER ON RESISTANCE OF 0.24 OHMS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.6kV |
| Max Power Dissipation | 350W |
See Relate Datesheet