IXBH10N170
| Parameters | |
|---|---|
| Factory Lead Time | 28 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.500007g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Series | BIMOSFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 140W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 140W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Max Collector Current | 20A |
| Reverse Recovery Time | 360 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Voltage - Collector Emitter Breakdown (Max) | 1700V |
| Collector Emitter Saturation Voltage | 2.3V |
| Turn On Time | 63 ns |
| Test Condition | 1360V, 10A, 56 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.8V @ 15V, 10A |
| Turn Off Time-Nom (toff) | 1800 ns |
| Gate Charge | 30nC |
| Current - Collector Pulsed (Icm) | 40A |
| Td (on/off) @ 25°C | 35ns/500ns |
| Switching Energy | 6mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet