IXBF42N300
| Parameters | |
|---|---|
| Factory Lead Time | 30 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-4, Isolated |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | BIMOSFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 240W |
| Terminal Position | SINGLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 240W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 3V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 1.7 μs |
| Collector Emitter Breakdown Voltage | 3kV |
| Voltage - Collector Emitter Breakdown (Max) | 3000V |
| Turn On Time | 652 ns |
| Test Condition | 1500V, 42A, 20 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 42A |
| Turn Off Time-Nom (toff) | 950 ns |
| Gate Charge | 200nC |
| Current - Collector Pulsed (Icm) | 380A |
| Td (on/off) @ 25°C | 72ns/445ns |
| Gate-Emitter Voltage-Max | 25V |
| Gate-Emitter Thr Voltage-Max | 5V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet