IXBF40N160
| Parameters | |
|---|---|
| Turn Off Time-Nom (toff) | 340 ns |
| Gate Charge | 130nC |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 8V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 32 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | BIMOSFET™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | HIGH RELIABILITY, FAST SWITCHING |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 250W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 250W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Turn On Delay Time | 200 ns |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 300 ns |
| Collector Emitter Voltage (VCEO) | 1.6kV |
| Max Collector Current | 28A |
| Collector Emitter Breakdown Voltage | 1.6kV |
| Voltage - Collector Emitter Breakdown (Max) | 1600V |
| Collector Emitter Saturation Voltage | 6.2V |
| Turn On Time | 260 ns |
| Test Condition | 960V, 25A, 22 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 7.1V @ 15V, 20A |
See Relate Datesheet