IRLL110TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 4 |
| Weight | 250.212891mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 540mOhm |
| Additional Feature | AVALANCHE RATED |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2W Ta 3.1W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.3 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 540m Ω @ 900mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 5V |
| Rise Time | 47ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 1.5A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | 100V |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.8mm |
| Length | 6.7mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet