| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 140nC @ 4.5V |
| Rise Time | 230ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 35 ns |
| Turn-Off Delay Time | 29 ns |
| Continuous Drain Current (ID) | 76A |
| Gate to Source Voltage (Vgs) | 16V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 5nF |
| Drain to Source Resistance | 9mOhm |
| Rds On Max | 6 mΩ |
| Nominal Vgs | 1 V |
| Height | 16.12mm |
| Length | 10.6172mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Supplier Device Package | TO-220AB Full-Pak |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 6MOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 67A |
| Number of Elements | 1 |
| Power Dissipation-Max | 63W Tc |
| Element Configuration | Single |
| Power Dissipation | 48W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 76A Tc |