IRLHS2242TR2PBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerVDFN |
| Number of Pins | 6 |
| Supplier Device Package | 6-PQFN (2x2) |
| Packaging | Cut Tape (CT) |
| Published | 2011 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 2.1W |
| Turn On Delay Time | 7.9 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 877pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A Ta 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 54ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 66 ns |
| Turn-Off Delay Time | 54 ns |
| Continuous Drain Current (ID) | 7.2A |
| Threshold Voltage | -800mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Input Capacitance | 870pF |
| Recovery Time | 41 ns |
| Drain to Source Resistance | 31mOhm |
| Rds On Max | 31 mΩ |
| Nominal Vgs | -800 mV |
| Height | 950μm |
| Length | 2.1mm |
| Width | 2.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet