IRL520LPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2017 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Pin Count | 3 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 60W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 5.5A, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Rise Time | 64ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4V 5V |
| Vgs (Max) | ±10V |
| Fall Time (Typ) | 27 ns |
| Turn-Off Delay Time | 21 ns |
| Continuous Drain Current (ID) | 9.2A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain-source On Resistance-Max | 0.27Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Height | 8.76mm |
| Length | 10.54mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet