IRGPS60B120KDP
| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-274AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 595W |
| Current Rating | 105A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 595W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 72 ns |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 32ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 366 ns |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Collector Current | 105A |
| Reverse Recovery Time | 180 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 2.5V |
| Turn On Time | 104 ns |
| Test Condition | 600V, 15A, 4.7 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.75V @ 15V, 60A |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | 105A |
| Turn Off Time-Nom (toff) | 411 ns |
| IGBT Type | NPT |
| Gate Charge | 340nC |
| Current - Collector Pulsed (Icm) | 240A |
| Switching Energy | 3.21mJ (on), 4.78mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 58ns |
| Height | 25.05mm |
| Length | 16.1mm |
| Width | 5.5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet