IRGP50B60PD1-EP
| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Rise Time-Max | 20ns |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Input Type | Standard |
| Power - Max | 390W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 42ns |
| JEDEC-95 Code | TO-247AD |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Power Dissipation-Max (Abs) | 390W |
| Turn On Time | 39 ns |
| Test Condition | 390V, 33A, 3.3 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.85V @ 15V, 50A |
| Turn Off Time-Nom (toff) | 161 ns |
| IGBT Type | NPT |
| Gate Charge | 205nC |
| Current - Collector Pulsed (Icm) | 150A |
| Td (on/off) @ 25°C | 30ns/130ns |
| Switching Energy | 255μJ (on), 375μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 20ns |
| RoHS Status | RoHS Compliant |
See Relate Datesheet