| Parameters | |
|---|---|
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5V |
| Fall Time-Max (tf) | 124ns |
| Height | 20.701mm |
| Length | 15.875mm |
| Width | 5.3086mm |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 180W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Rise Time-Max | 50ns |
| Element Configuration | Single |
| Power Dissipation | 180W |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.7V |
| Max Collector Current | 70A |
| Reverse Recovery Time | 122 ns |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1.7V |
| Turn On Time | 55 ns |
| Test Condition | 240V, 40A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 40A |
| Turn Off Time-Nom (toff) | 309 ns |
| IGBT Type | Trench |
| Gate Charge | 73nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 18ns/144ns |
| Switching Energy | 409μJ (on), 838μJ (off) |