IRGB14C40LPBF
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 6.000006g |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~175°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Additional Feature | LOW SATURATION VOLTAGE |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 430V |
| Max Power Dissipation | 125W |
| Current Rating | 14A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Case Connection | COLLECTOR |
| Input Type | Logic |
| Turn On Delay Time | 900 ns |
| Clamping Voltage | 430V |
| Transistor Application | AUTOMOTIVE IGNITION |
| Rise Time | 2.4μs |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 6 μs |
| Collector Emitter Voltage (VCEO) | 1.75V |
| Max Collector Current | 20A |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 430V |
| Collector Emitter Saturation Voltage | 1.4V |
| Turn On Time | 3700 ns |
| Vce(on) (Max) @ Vge, Ic | 1.75V @ 5V, 14A |
| Gate Charge | 27nC |
| Td (on/off) @ 25°C | 900ns/6μs |
| Gate-Emitter Voltage-Max | 12V |
| Gate-Emitter Thr Voltage-Max | 2.2V |
| Height | 15.24mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
See Relate Datesheet