IRG7PSH54K10DPBF
| Parameters | |
|---|---|
| Switching Energy | 4.8mJ (on), 2.8mJ (off) |
| Gate-Emitter Voltage-Max | 30V |
| Gate-Emitter Thr Voltage-Max | 7.5V |
| Fall Time-Max (tf) | 90ns |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Factory Lead Time | 19 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 247 |
| Weight | 38.000013g |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 520W |
| Rise Time-Max | 105ns |
| Element Configuration | Single |
| Input Type | Standard |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2.4V |
| Max Collector Current | 65A |
| Reverse Recovery Time | 170 ns |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 120A |
| Collector Emitter Saturation Voltage | 2.4V |
| Test Condition | 600V, 50A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 50A |
| Gate Charge | 435nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 110ns/490ns |
See Relate Datesheet