| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | Insulated Gate BIP Transistors |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRG4RC20FPBF |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Input Type | Standard |
| Power - Max | 66W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| JEDEC-95 Code | TO-252AA |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 22A |
| Power Dissipation-Max (Abs) | 66W |
| Turn On Time | 51 ns |
| Test Condition | 480V, 12A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 12A |
| Turn Off Time-Nom (toff) | 706 ns |
| Gate Charge | 27nC |
| Current - Collector Pulsed (Icm) | 44A |
| Td (on/off) @ 25°C | 26ns/194ns |
| Switching Energy | 190μJ (on), 920μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 340ns |
| RoHS Status | RoHS Compliant |