IRG4PC50FPBF

IRG4PC50FPBF

IRG4PC50FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRG4PC50FPBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 412
  • Description: IRG4PC50FPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Max Power Dissipation 200W
Current Rating 70A
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 31 ns
Rise Time 25ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 240 ns
Collector Emitter Voltage (VCEO) 1.6V
Max Collector Current 70A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.6V
Turn On Time 52 ns
Test Condition 480V, 39A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Turn Off Time-Nom (toff) 620 ns
Gate Charge 190nC
Current - Collector Pulsed (Icm) 280A
Td (on/off) @ 25°C 31ns/240ns
Switching Energy 370μJ (on), 2.1mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 190ns
Height 20.7mm
Length 15.87mm
Width 5.3086mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
See Relate Datesheet

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