IRG4IBC20FDPBF
| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 34W |
| Current Rating | 14.3A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 34W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Rise Time | 20ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 2V |
| Max Collector Current | 14.3A |
| Reverse Recovery Time | 37 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2V |
| Turn On Time | 63 ns |
| Test Condition | 480V, 9A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 9A |
| Turn Off Time-Nom (toff) | 610 ns |
| Gate Charge | 27nC |
| Current - Collector Pulsed (Icm) | 64A |
| Td (on/off) @ 25°C | 43ns/240ns |
| Switching Energy | 250μJ (on), 640μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Height | 16.129mm |
| Length | 10.7442mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet