IRG4BH20K-LPBF
| Parameters | |
|---|---|
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 11A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Power Dissipation | 60W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 23 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 26ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 93 ns |
| Collector Emitter Voltage (VCEO) | 4.3V |
| Max Collector Current | 11A |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 3.17V |
| Turn On Time | 51 ns |
| Test Condition | 960V, 5A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Turn Off Time-Nom (toff) | 720 ns |
| Gate Charge | 28nC |
| Current - Collector Pulsed (Icm) | 22A |
| Td (on/off) @ 25°C | 23ns/93ns |
| Switching Energy | 450μJ (on), 440μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 400ns |
| Height | 9.65mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 13 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Number of Pins | 3 |
| Weight | 2.084002g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | ULTRA FAST, LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 60W |
| Terminal Position | SINGLE |
See Relate Datesheet