IRFS9N60APBF
| Parameters | |
|---|---|
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 170W Tc |
| Element Configuration | Single |
| Power Dissipation | 170W |
| Turn On Delay Time | 13 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A Tc |
| Factory Lead Time | 8 Weeks |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| Mount | Surface Mount |
| Rise Time | 25ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Mounting Type | Surface Mount |
| Vgs (Max) | ±30V |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Fall Time (Typ) | 22 ns |
| Number of Pins | 3 |
| Turn-Off Delay Time | 30 ns |
| Continuous Drain Current (ID) | 9.2A |
| Supplier Device Package | D2PAK |
| Threshold Voltage | 4V |
| Weight | 1.437803g |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Input Capacitance | 1.4nF |
| Drain to Source Resistance | 750mOhm |
| Rds On Max | 750 mΩ |
| Operating Temperature | -55°C~150°C TJ |
| Height | 4.83mm |
| Packaging | Tube |
| Length | 10.67mm |
| Width | 9.65mm |
| Published | 2014 |
| Radiation Hardening | No |
| Part Status | Active |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free | Lead Free |
| Resistance | 750mOhm |
| Max Operating Temperature | 150°C |
See Relate Datesheet