IRFS59N10DPBF
| Parameters | |
|---|---|
| Factory Lead Time | 52 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Power Dissipation-Max | 3.8W Ta 200W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 35.4A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2450pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 59A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 114nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet