IRFS4510PBF

IRFS4510PBF

MOSFET N-CH 100V 61A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFS4510PBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 772
  • Description: MOSFET N-CH 100V 61A D2PAK (Kg)

Details

Tags

Parameters
Continuous Drain Current (ID) 61A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Nominal Vgs 3 V
Height 4.83mm
Length 10.67mm
Width 9.65mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Factory Lead Time 52 Weeks
Lead Free Lead Free
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2007
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Power Dissipation 140W
Turn On Delay Time 13 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 13.9m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 50V
Current - Continuous Drain (Id) @ 25°C 61A Tc
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Rise Time 32ns
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 28 ns
See Relate Datesheet

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