IRFR48ZPBF

IRFR48ZPBF

IRFR48ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFR48ZPBF
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 614
  • Description: IRFR48ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Drain to Source Breakdown Voltage 55V
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Dual Supply Voltage 55V
Packaging Tube
Recovery Time 40 ns
Published 2004
Series HEXFET®
Nominal Vgs 4 V
Part Status Discontinued
Height 2.3876mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Length 10.3886mm
Termination SMD/SMT
Width 6.73mm
ECCN Code EAR99
Radiation Hardening No
Resistance 11MOhm
Voltage - Rated DC 55V
REACH SVHC No SVHC
Technology MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant
Current Rating 62A
Number of Elements 1
Lead Free Lead Free
Power Dissipation-Max 91W Tc
Element Configuration Single
Power Dissipation 91W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11m Ω @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 1720pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V
Rise Time 61ns
See Relate Datesheet

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