IRFR120NTRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Supplier Device Package | D-Pak |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Resistance | 210mOhm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 9.1A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 48W Tc |
| Element Configuration | Single |
| Power Dissipation | 39W |
| Turn On Delay Time | 4.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 5.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Rise Time | 23ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 23 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 9.4A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Input Capacitance | 330pF |
| Recovery Time | 150 ns |
| Max Junction Temperature (Tj) | 175°C |
| Drain to Source Resistance | 210mOhm |
| Rds On Max | 210 mΩ |
| Nominal Vgs | 4 V |
| Height | 2.52mm |
| Length | 6.7056mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet