IRFPS3815PBF
| Parameters | |
|---|---|
| Factory Lead Time | 25 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-274AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 150V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 105A |
| Number of Elements | 1 |
| Power Dissipation-Max | 441W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 441W |
| Case Connection | DRAIN |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15m Ω @ 63A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6810pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 105A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 390nC @ 10V |
| Rise Time | 130ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 51 ns |
| Continuous Drain Current (ID) | 105A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 150V |
| Height | 20.8mm |
| Length | 16.0782mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet