IRFPS3810PBF
| Parameters | |
|---|---|
| Factory Lead Time | 25 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-274AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | HEXFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 9Ohm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 170A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 580W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 441W |
| Case Connection | DRAIN |
| Turn On Delay Time | 24 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6790pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 170A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 390nC @ 10V |
| Rise Time | 270ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 140 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 170A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 670A |
| Dual Supply Voltage | 100V |
| Recovery Time | 330 ns |
| Nominal Vgs | 5 V |
| Height | 20.8mm |
| Length | 16.0782mm |
| Width | 5.3mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
See Relate Datesheet