IRFP7530PBF

IRFP7530PBF

IRFP7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFP7530PBF
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 787
  • Description: IRFP7530PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 341W Tc
Element Configuration Single
Power Dissipation 341W
Turn On Delay Time 52 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 13703pF @ 25V
Current - Continuous Drain (Id) @ 25°C 195A Tc
Gate Charge (Qg) (Max) @ Vgs 411nC @ 10V
Rise Time 141ns
Drain to Source Voltage (Vdss) 60V
Factory Lead Time 12 Weeks
Mount Through Hole
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Mounting Type Through Hole
Vgs (Max) ±20V
Package / Case TO-247-3
Fall Time (Typ) 104 ns
Number of Pins 3
Turn-Off Delay Time 172 ns
Weight 38.000013g
Continuous Drain Current (ID) 195A
Operating Temperature -55°C~175°C TJ
Threshold Voltage 3.7V
Packaging Tube
Gate to Source Voltage (Vgs) 20V
Published 2013
Height 20.7mm
Series HEXFET®, StrongIRFET™
Length 15.87mm
Part Status Active
Width 5.31mm
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
ECCN Code EAR99
Lead Free Lead Free
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
See Relate Datesheet

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