IRFH8318TR2PBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Supplier Device Package | PQFN (5x6) |
| Packaging | Cut Tape (CT) |
| Published | 2008 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 3.1MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.6W |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 3.6W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3180pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 27A Ta 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Rise Time | 33ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 27A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 3.18nF |
| Recovery Time | 24 ns |
| Drain to Source Resistance | 3.1mOhm |
| Rds On Max | 3.1 mΩ |
| Nominal Vgs | 1.8 V |
| Height | 1.17mm |
| Length | 5.85mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet