IRFH8303TRPBF

IRFH8303TRPBF

MOSFET N-CH 30V 100A PQFN


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRFH8303TRPBF
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 225
  • Description: MOSFET N-CH 30V 100A PQFN (Kg)

Details

Tags

Parameters
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 43A
Drain to Source Breakdown Voltage 30V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series HEXFET®, StrongIRFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Single
Number of Channels 1
Power Dissipation-Max 3.7W Ta 156W Tc
Power Dissipation 3.7W
Turn On Delay Time 21 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds 7736pF @ 24V
Current - Continuous Drain (Id) @ 25°C 43A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 179nC @ 10V
Rise Time 91ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 48 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 1.7V
See Relate Datesheet

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