IRFH7110TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TQFN Exposed Pad |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| JESD-30 Code | R-PDSO-F5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.6W Ta 104W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.6W |
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13.5m Ω @ 35A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3240pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta 58A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
| Rise Time | 23ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 18 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 50A |
| Pulsed Drain Current-Max (IDM) | 240A |
| Nominal Vgs | 3 V |
| Height | 1.17mm |
| Length | 5.85mm |
| Width | 5mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet