IRFD9014PBF
| Parameters | |
|---|---|
| Radiation Hardening | No |
| Max Operating Temperature | 175°C |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Row Spacing | 7.62 mm |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Power Dissipation | 1.3W |
| Turn On Delay Time | 11 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 660mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 63ns |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 63 ns |
| Turn-Off Delay Time | 10 ns |
| Factory Lead Time | 8 Weeks |
| Continuous Drain Current (ID) | 1.1A |
| Mount | Through Hole |
| Threshold Voltage | -4V |
| Mounting Type | Through Hole |
| Gate to Source Voltage (Vgs) | 20V |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | -60V |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Input Capacitance | 270pF |
| Drain to Source Resistance | 500mOhm |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Rds On Max | 500 mΩ |
| Published | 2005 |
| Nominal Vgs | -4 V |
| Height | 3.3782mm |
| Part Status | Active |
| Length | 6.2738mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Width | 5.0038mm |
| Resistance | 500mOhm |
See Relate Datesheet