IRFD123
| Parameters | |
|---|---|
| DS Breakdown Voltage-Min | 80V |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Packaging | Tube |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | TIN LEAD |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDIP-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 780mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain Current-Max (Abs) (ID) | 1.1A |
| Drain-source On Resistance-Max | 0.4Ohm |
See Relate Datesheet