IRFD110PBF
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 16 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 1A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 1A |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Recovery Time | 200 ns |
| Max Junction Temperature (Tj) | 175°C |
| Nominal Vgs | 4 V |
| Height | 4.57mm |
| Length | 5mm |
| Width | 6.29mm |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 540mOhm |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 1A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 4 |
| JESD-30 Code | R-PDIP-T3 |
| Qualification Status | Not Qualified |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Row Spacing | 7.62 mm |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.3W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 540m Ω @ 600mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 8.3nC @ 10V |
| Rise Time | 16ns |
See Relate Datesheet