| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | HEXFET®, StrongIRFET™ |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Configuration | Single |
| Power Dissipation-Max | 208W Tc |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.5m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4730pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 120A |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 10 Weeks |