IRFB11N50APBF
| Parameters | |
|---|---|
| Fall Time (Typ) | 28 ns |
| Turn-Off Delay Time | 32 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 500V |
| Input Capacitance | 1.423nF |
| Factory Lead Time | 11 Weeks |
| Mount | Through Hole |
| Drain to Source Resistance | 520mOhm |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Rds On Max | 520 mΩ |
| Supplier Device Package | TO-220AB |
| Weight | 6.000006g |
| Operating Temperature | -55°C~150°C TJ |
| Nominal Vgs | 4 V |
| Packaging | Tube |
| Published | 2009 |
| Height | 9.01mm |
| Part Status | Active |
| Length | 10.41mm |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 520mOhm |
| Width | 4.7mm |
| Max Operating Temperature | 150°C |
| Radiation Hardening | No |
| Min Operating Temperature | -55°C |
| REACH SVHC | Unknown |
| Voltage - Rated DC | 500V |
| RoHS Status | ROHS3 Compliant |
| Technology | MOSFET (Metal Oxide) |
| Lead Free | Lead Free |
| Current Rating | 11A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 170W Tc |
| Element Configuration | Single |
| Power Dissipation | 170W |
| Turn On Delay Time | 14 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 520mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1423pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
See Relate Datesheet