IRF7820TRPBF
| Parameters | |
|---|---|
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Transistor Element Material | SILICON |
| Turn-Off Delay Time | 14 ns |
| Operating Temperature | -55°C~150°C TJ |
| Continuous Drain Current (ID) | 3.7A |
| Packaging | Tape & Reel (TR) |
| Threshold Voltage | 4V |
| Published | 2012 |
| Gate to Source Voltage (Vgs) | 20V |
| DS Breakdown Voltage-Min | 200V |
| Series | HEXFET® |
| Part Status | Active |
| Nominal Vgs | 4 V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Number of Terminations | 8 |
| RoHS Status | ROHS3 Compliant |
| ECCN Code | EAR99 |
| Lead Free | Lead Free |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 7.1 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 78m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A Ta |
| Factory Lead Time | 12 Weeks |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| Mount | Surface Mount |
| Rise Time | 3.2ns |
| Mounting Type | Surface Mount |
| Drain to Source Voltage (Vdss) | 200V |
See Relate Datesheet