IRF7779L2TRPBF
| Parameters | |
|---|---|
| Number of Pins | 11 |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Transistor Element Material | SILICON |
| Rise Time | 19ns |
| Operating Temperature | -55°C~175°C TJ |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Vgs (Max) | ±20V |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Part Status | Active |
| Fall Time (Typ) | 12 ns |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Turn-Off Delay Time | 36 ns |
| Number of Terminations | 9 |
| ECCN Code | EAR99 |
| Continuous Drain Current (ID) | 11A |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Threshold Voltage | 4V |
| Subcategory | FET General Purpose Power |
| Gate to Source Voltage (Vgs) | 20V |
| Technology | MOSFET (Metal Oxide) |
| Drain Current-Max (Abs) (ID) | 67A |
| Terminal Position | BOTTOM |
| Drain to Source Breakdown Voltage | 150V |
| JESD-30 Code | R-XBCC-N9 |
| Pulsed Drain Current-Max (IDM) | 270A |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Avalanche Energy Rating (Eas) | 270 mJ |
| Power Dissipation-Max | 3.3W Ta 125W Tc |
| Height | 508μm |
| Operating Mode | ENHANCEMENT MODE |
| Length | 9.144mm |
| Power Dissipation | 125W |
| Case Connection | DRAIN |
| Width | 7.1mm |
| Turn On Delay Time | 16 ns |
| Radiation Hardening | No |
| FET Type | N-Channel |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 11m Ω @ 40A, 10V |
| Factory Lead Time | 12 Weeks |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 6660pF @ 25V |
| Package / Case | DirectFET™ Isometric L8 |
| Current - Continuous Drain (Id) @ 25°C | 375A Tc |
See Relate Datesheet