IRF7504TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| Resistance | 270mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Current Rating | -1.7A |
| Base Part Number | IRF7504PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 9.1 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 43 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | -1.7A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 9.6A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 860μm |
| Length | 3mm |
| Width | 3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet