IRF7304TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Resistance | 90mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Power Rating | 2W |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -4.3A |
| Base Part Number | IRF7304PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 8.4 ns |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 2.2A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| Rise Time | 26ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 33 ns |
| Turn-Off Delay Time | 51 ns |
| Continuous Drain Current (ID) | -4.3A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 3.6A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 84 ns |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -700 mV |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
See Relate Datesheet