IRF6712STRPBF
| Parameters | |
|---|---|
| Case Connection | DRAIN |
| Turn On Delay Time | 11 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 4.9m Ω @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 17A Ta 68A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| Rise Time | 40ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 17A |
| Gate to Source Voltage (Vgs) | 20V |
| Factory Lead Time | 12 Weeks |
| Drain to Source Breakdown Voltage | 25V |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SQ |
| Height | 506μm |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Length | 4.826mm |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| Width | 3.95mm |
| Series | HEXFET® |
| JESD-609 Code | e1 |
| Radiation Hardening | No |
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Lead Free | Lead Free |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 4.9MOhm |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.2W Ta 36W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 36W |
See Relate Datesheet