IRF6678
| Parameters | |
|---|---|
| Avalanche Energy Rating (Eas) | 210 mJ |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MX |
| Number of Pins | 7 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 30A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| JESD-30 Code | R-XBCC-N3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.8W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.2m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 5640pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 30A Ta 150A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 4.5V |
| Rise Time | 71ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8.1 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 24A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0022Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 240A |
See Relate Datesheet