IRF6645TR1PBF
| Parameters | |
|---|---|
| Contact Plating | Copper, Silver, Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric SJ |
| Number of Pins | 5 |
| Supplier Device Package | DIRECTFET™ SJ |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Resistance | 35MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 5.7A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.2W Ta 42W Tc |
| Element Configuration | Single |
| Power Dissipation | 42W |
| Turn On Delay Time | 9.2 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 5.7A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A Ta 25A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 5ns |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5.1 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Dual Supply Voltage | 100V |
| Input Capacitance | 890pF |
| Recovery Time | 47 ns |
| Drain to Source Resistance | 28mOhm |
| Rds On Max | 35 mΩ |
| Nominal Vgs | 3 V |
| Height | 530μm |
| Length | 4.826mm |
| Width | 3.95mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet