IRF6629TR1PBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MX |
| Number of Pins | 5 |
| Supplier Device Package | DIRECTFET™ MX |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | SMD/SMT |
| Resistance | 2.1MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Voltage - Rated DC | 25V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 29A |
| Power Dissipation-Max | 2.8W Ta 100W Tc |
| Power Dissipation | 100W |
| Turn On Delay Time | 20 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 29A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 100μA |
| Input Capacitance (Ciss) (Max) @ Vds | 4260pF @ 13V |
| Current - Continuous Drain (Id) @ 25°C | 29A Ta 180A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 51nC @ 4.5V |
| Rise Time | 67ns |
| Drain to Source Voltage (Vdss) | 25V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7.4 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 23A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 25V |
| Dual Supply Voltage | 25V |
| Input Capacitance | 4.26nF |
| Drain to Source Resistance | 2.7mOhm |
| Rds On Max | 2.1 mΩ |
| Nominal Vgs | 1.8 V |
| Height | 506μm |
| Width | 5.05mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet