IRF6618TRPBF
| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 89W |
| Factory Lead Time | 12 Weeks |
| Case Connection | DRAIN |
| Mount | Surface Mount |
| Turn On Delay Time | 21 ns |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MT |
| FET Type | N-Channel |
| Number of Pins | 5 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Rds On (Max) @ Id, Vgs | 2.2m Ω @ 30A, 10V |
| Operating Temperature | -40°C~150°C TJ |
| Vgs(th) (Max) @ Id | 2.35V @ 250μA |
| Packaging | Tape & Reel (TR) |
| Input Capacitance (Ciss) (Max) @ Vds | 5640pF @ 15V |
| Published | 2007 |
| Current - Continuous Drain (Id) @ 25°C | 30A Ta 170A Tc |
| Series | HEXFET® |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 4.5V |
| Rise Time | 71ns |
| JESD-609 Code | e1 |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Part Status | Active |
| Fall Time (Typ) | 8.1 ns |
| Turn-Off Delay Time | 27 ns |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Continuous Drain Current (ID) | 170mA |
| Resistance | 2.2MOhm |
| Threshold Voltage | 1.64V |
| Gate to Source Voltage (Vgs) | 20V |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Drain Current-Max (Abs) (ID) | 29A |
| Subcategory | FET General Purpose Power |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 240A |
| Voltage - Rated DC | 30V |
| Height | 508μm |
| Length | 6.35mm |
| Technology | MOSFET (Metal Oxide) |
| Width | 5.0546mm |
| Radiation Hardening | No |
| Terminal Position | BOTTOM |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Peak Reflow Temperature (Cel) | 260 |
| Lead Free | Lead Free |
| Current Rating | 30A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-XBCC-N3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 89W Tc |
See Relate Datesheet