IRF5305PBF
| Parameters | |
|---|---|
| Power Dissipation-Max | 110W Tc |
| Element Configuration | Single |
| Power Dissipation | 110W |
| Turn On Delay Time | 14 ns |
| FET Type | P-Channel |
| Factory Lead Time | 12 Weeks |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16A, 10V |
| Contact Plating | Tin |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Mount | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Mounting Type | Through Hole |
| Current - Continuous Drain (Id) @ 25°C | 31A Tc |
| Package / Case | TO-220-3 |
| Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Number of Pins | 3 |
| Rise Time | 66ns |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 55V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Operating Temperature | -55°C~175°C TJ |
| Vgs (Max) | ±20V |
| Packaging | Tube |
| Fall Time (Typ) | 63 ns |
| Turn-Off Delay Time | 39 ns |
| Published | 2000 |
| Continuous Drain Current (ID) | -31A |
| Threshold Voltage | -4V |
| Series | HEXFET® |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Dual Supply Voltage | -55V |
| Input Capacitance | 1.2nF |
| Termination | Through Hole |
| Recovery Time | 110 ns |
| Max Junction Temperature (Tj) | 175°C |
| Resistance | 60mOhm |
| Drain to Source Resistance | 60mOhm |
| Max Operating Temperature | 175°C |
| Rds On Max | 60 mΩ |
| Nominal Vgs | -4 V |
| Height | 19.3mm |
| Min Operating Temperature | -55°C |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| Voltage - Rated DC | -55V |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Technology | MOSFET (Metal Oxide) |
| Lead Free | Contains Lead, Lead Free |
| Current Rating | -31A |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Number of Channels | 1 |
See Relate Datesheet