IRF3711PBF
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 6MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 110A |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta 120W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 120W |
| Case Connection | DRAIN |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 6m Ω @ 15A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2980pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 110A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
| Rise Time | 220ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 110A |
| Threshold Voltage | 3V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 440A |
| Dual Supply Voltage | 20V |
| Avalanche Energy Rating (Eas) | 460 mJ |
| Nominal Vgs | 3 V |
| Height | 8.763mm |
| Length | 10.5156mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet