IRF1503SPBF

IRF1503SPBF

MOSFET N-CH 30V 75A D2PAK


  • Manufacturer: Infineon Technologies
  • Origchip NO: 376-IRF1503SPBF
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Datasheet: PDF
  • Stock: 623
  • Description: MOSFET N-CH 30V 75A D2PAK (Kg)

Details

Tags

Parameters
Fall Time (Typ) 48 ns
Turn-Off Delay Time 59 ns
Continuous Drain Current (ID) 75A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Nominal Vgs 4 V
Height 4.826mm
Length 10.668mm
Width 9.65mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2010
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Resistance 3.3MOhm
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Current Rating 75A
Number of Elements 1
Power Dissipation-Max 200W Tc
Element Configuration Single
Power Dissipation 200W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3m Ω @ 140A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5730pF @ 25V
Current - Continuous Drain (Id) @ 25°C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Forward Voltage 1.3V
See Relate Datesheet

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