IRF1104PBF
| Parameters | |
|---|---|
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
| Threshold Voltage | 4V |
| Subcategory | FET General Purpose Power |
| JEDEC-95 Code | TO-220AB |
| Voltage - Rated DC | 40V |
| Gate to Source Voltage (Vgs) | 20V |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Breakdown Voltage | 40V |
| Current Rating | 100A |
| Pulsed Drain Current-Max (IDM) | 400A |
| Dual Supply Voltage | 40V |
| Number of Elements | 1 |
| Recovery Time | 110 ns |
| Power Dissipation-Max | 170W Tc |
| Nominal Vgs | 4 V |
| Element Configuration | Single |
| Height | 8.77mm |
| Length | 10.5156mm |
| Operating Mode | ENHANCEMENT MODE |
| Width | 4.69mm |
| Power Dissipation | 170W |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| RoHS Status | ROHS3 Compliant |
| FET Type | N-Channel |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Transistor Application | SWITCHING |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 9m Ω @ 60A, 10V |
| Package / Case | TO-220-3 |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 25V |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Current - Continuous Drain (Id) @ 25°C | 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 93nC @ 10V |
| Published | 1998 |
| Series | HEXFET® |
| Rise Time | 114ns |
| Part Status | Active |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Vgs (Max) | ±20V |
| Number of Terminations | 3 |
| Fall Time (Typ) | 19 ns |
| Termination | Through Hole |
| Turn-Off Delay Time | 28 ns |
| ECCN Code | EAR99 |
| Continuous Drain Current (ID) | 100A |
| Resistance | 9mOhm |
See Relate Datesheet