IPW60R045CPFKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 49 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | CoolMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Current Rating | 60A |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 431W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 431W |
| Turn On Delay Time | 30 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 44A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 60A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 190nC @ 10V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 10 ns |
| Turn-Off Delay Time | 100 ns |
| Continuous Drain Current (ID) | 60A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 600V |
| Drain-source On Resistance-Max | 0.045Ohm |
| Drain to Source Breakdown Voltage | 600V |
| Height | 25.549mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet