IPW60R017C7XKSA1
| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Package / Case | TO-247-3 |
| Surface Mount | NO |
| Published | 2013 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 446W |
| Case Connection | DRAIN |
| Turn On Delay Time | 30 ns |
| Transistor Application | SWITCHING |
| Drain to Source Voltage (Vdss) | 650V |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 106 ns |
| Continuous Drain Current (ID) | 109A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 495A |
| Avalanche Energy Rating (Eas) | 582 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Max Junction Temperature (Tj) | 150°C |
| Drain to Source Resistance | 15mOhm |
| Height | 25.4mm |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet