IPP80N03S4L04AKSA1
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2010 |
| Series | OptiMOS™ |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Additional Feature | ULTRA LOW RESISTANCE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 94W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 3.7m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 45μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Rise Time | 6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±16V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 80A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 16V |
| Max Dual Supply Voltage | 30V |
| Avalanche Energy Rating (Eas) | 95 mJ |
| RoHS Status | RoHS Compliant |
| Lead Free | Contains Lead |
See Relate Datesheet